Merged MOS-bipolar capacitor memory cell

ABSTRACT

A high density vertical merged MOS-bipolar-capacitor gain cell is realized for DRAM operation. The gain cell includes a vertical MOS transistor having a source region, a drain region, and a floating body region therebetween. The gain cell includes a vertical bi-polar transistor having an emitter region, a base region and a collector region. The base region for the vertical bi-polar transistor serves as the source region for the vertical MOS transistor. A gate opposes the floating body region and is separated therefrom by a gate oxide on a first side of the vertical MOS transistor. A floating body back gate opposes the floating body region on a second side of the vertical transistor. The base region for the vertical bi-polar transistor is coupled to a write data word line.

CROSS REFERENCE TO RELATED APPLICATIONS

The present application is a divisional of U.S. patent application Ser.No. 11/176,992, filed on Jul. 8, 2005 now U.S. Pat. No. 7,199,417; whichis a continuation of U.S. patent application Ser. No. 10/990,586, filedon Nov. 17, 2004, now issued as U.S. Pat. No. 6,940,761; which is adivisional of U.S. patent application Ser. No. 10/230,929, filed Aug.29, 2002, now issued as U.S. Pat. No. 6,838,723; each of which isincorporated herein by reference.

This application is related to the following co-pending, commonlyassigned U.S. patent application: “Single Transistor Vertical MemoryGain Cell,” Ser. No. 10/231,397, filed on Aug. 29, 2002, and which isherein incorporated by reference.

FIELD OF THE INVENTION

The present invention relates generally to integrated circuits, and inparticular to a merged MOS-bipolar capacitor memory cell.

BACKGROUND OF THE INVENTION

An essential semiconductor device is semiconductor memory, such as arandom access memory (RAM) device. A RAM device allows the user toexecute both read and write operations on its memory cells. Typicalexamples of RAM devices include dynamic random access memory (DRAM) andstatic random access memory (SRAM).

DRAM is a specific category of RAM containing an array of individualmemory cells, where each cell includes a capacitor for holding a chargeand a transistor for accessing the charge held in the capacitor. Thetransistor is often referred to as the access transistor or the transferdevice of the DRAM cell.

FIG. 1 illustrates a portion of a DRAM memory circuit containing twoneighboring DRAM cells 100. Each cell 100 contains a storage capacitor140 and an access field effect transistor or transfer device 120. Foreach cell, one side of the storage capacitor 140 is connected to areference voltage (illustrated as a ground potential for conveniencepurposes). The other side of the storage capacitor 140 is connected tothe drain of the transfer device 120. The gate of the transfer device120 is connected to a signal known in the art as a word line 180. Thesource of the transfer device 120 is connected to a signal known in theart as a bit line 160 (also known in the art as a digit line). With thememory cell 100 components connected in this manner, it is apparent thatthe word line 180 controls access to the storage capacitor 140 byallowing or preventing the signal (representing a logic “0” or a logic“1”) carried on the bit line 160 to be written to or read from thestorage capacitor 140. Thus, each cell 100 contains one bit of data(i.e., a logic “0” or logic “1”).

In FIG. 2 a DRAM circuit 240 is illustrated. The DRAM 240 contains amemory array 242, row and column decoders 244, 248 and a sense amplifiercircuit 246. The memory array 242 consists of a plurality of memorycells 200 (constructed as illustrated in FIG. 1) whose word lines 280and bit lines 260 are commonly arranged into rows and columns,respectively. The bit lines 260 of the memory array 242 are connected tothe sense amplifier circuit 246, while its word lines 280 are connectedto the row decoder 244. Address and control signals are input onaddress/control lines 261 into the DRAM 240 and connected to the columndecoder 248, sense amplifier circuit 246 and row decoder 244 and areused to gain read and write access, among other things, to the memoryarray 242.

The column decoder 248 is connected to the sense amplifier circuit 246via control and column select signals on column select lines 262. Thesense amplifier circuit 246 receives input data destined for the memoryarray 242 and outputs data read from the memory array 242 overinput/output (I/O) data lines 263. Data is read from the cells of thememory array 242 by activating a word line 280 (via the row decoder244), which couples all of the memory cells corresponding to that wordline to respective bit lines 260, which define the columns of the array.One or more bit lines 260 are also activated. When a particular wordline 280 and bit lines 260 are activated, the sense amplifier circuit246 connected to a bit line column detects and amplifies the data bittransferred from the storage capacitor of the memory cell to its bitline 260 by measuring the potential difference between the activated bitline 260 and a reference line which may be an inactive bit line. Theoperation of DRAM sense amplifiers is described, for example, in U.S.Pat. Nos. 5,627,785; 5,280,205; and 5,042,011, all assigned to MicronTechnology Inc., and incorporated by reference herein.

The memory cells of dynamic random access memories (DRAMs) are comprisedof two main components, a field-effect transistor (FET) and a capacitorwhich functions as a storage element. The need to increase the storagecapability of semiconductor memory devices has led to the development ofvery large scale integrated (VLSI) cells which provides a substantialincrease in component density. As component density has increased, cellcapacitance has had to be decreased because of the need to maintainisolation between adjacent devices in the memory array. However,reduction in memory cell capacitance reduces the electrical signaloutput from the memory cells, making detection of the memory cell outputsignal more difficult. Thus, as the density of DRAM devices increases,it becomes more and more difficult to obtain reasonable storagecapacity.

As DRAM devices are projected as operating in the gigabit range, theability to form such a large number of storage capacitors requiressmaller areas. However, this conflicts with the requirement for largercapacitance because capacitance is proportional to area. Moreover, thetrend for reduction in power supply voltages results in stored chargereduction and leads to degradation of immunity to alpha particle inducedsoft errors, both of which require that the storage capacitance be evenlarger.

In order to meet the high density requirements of VLSI cells in DRAMcells, some manufacturers are utilizing DRAM memory cell designs basedon non-planar capacitor structures, such as complicated stackedcapacitor structures and deep trench capacitor structures. Althoughnon-planar capacitor structures provide increased cell capacitance, sucharrangements create other problems that affect performance of the memorycell. For example, trench capacitors are fabricated in trenches formedin the semiconductor substrate, the problem of trench-to-trench chargeleakage caused by the parasitic transistor effect between adjacenttrenches is enhanced. Moreover, the alpha-particle component of normalbackground radiation can generate hole-electron pairs in the siliconsubstrate which functions as one of the storage plates of the trenchcapacitor. This phenomenon will cause a charge stored within theaffected cell capacitor to rapidly dissipate, resulting in a soft error.

Another approach has been to provide DRAM cells having a dynamic gain.These memory cells are commonly referred to as gain cells. For example,U.S. Pat. No. 5,220,530 discloses a two-transistor gain-type dynamicrandom access memory cell. The memory cell includes two field-effecttransistors, one of the transistors functioning as write transistor andthe other transistor functioning as a data storage transistor. Thestorage transistor is capacitively coupled via an insulating layer tothe word line to receive substrate biasing by capacitive coupling fromthe read word line. This gain cell arrangement requires a word line, abit or data line, and a separate power supply line which is adisadvantage, particularly in high density memory structures.

The inventor has previously disclosed a DRAM gain cell using twotransistors. (See generally, L. Forbes, “Merged Transistor Structure forGain Memory Cell,” U.S. Pat. No. 5,732,014, issued 24 Mar. 1998,continuation granted as U.S. Pat. No. 5,897,351, issued 27 Apr. 1999). Anumber of other gain cells have also been disclosed. (See generally,Sunouchi et al., “A self-Amplifying (SEA) Cell for Future High DensityDRAMs,” Ext. Abstracts of IEEE Int. Electron Device Meeting, pp. 465-468(1991); M. Terauchi et al., “A Surrounding Gate Transistor (SGT) GainCell for Ultra High Density DRAMS,” VLSI Tech. Symposium, pp. 21-22(1993); S. Shukuri et al., “Super-Low-Voltage Operation of a Semi-StaticComplementary Gain RAM Memory Cell,” VLSI Tech. Symposium pp. 23-24(1993); S. Shukuri et al., “A Complementary Gain Cell Technology forSub-1V Supply DRAMs,” Ext. Abs. of IEEE Int. Electron Device Meeting,pp. 1006-1009 (1992); S. Shukuri et al., “A Semi-Static ComplementaryGain Cell Technology for Sub-1 V Supply DRAM's,” IEEE Trans. on ElectronDevices, Vol. 41, pp. 926-931 (1994); H. Wann and C. Hu, “ACapacitorless DRAM Cell on SOI Substrate,” Ext. Abs. IEEE Int. ElectronDevices Meeting, pp. 635-638; W. Kim et al., “An ExperimentalHigh-Density DRAM Cell with a Built-in Gain Stage,” IEEE J. ofSolid-State Circuits, Vol. 29, pp. 978-981 (1994); W. H. Krautschneideret al., “Planar Gain Cell for Low Voltage Operation and GigabitMemories,” Proc. VLSI Technology Symposium, pp. 139-140 (1995); D. M.Kenney, “Charge Amplifying trench Memory Cell,” U.S. Pat. No. 4,970,689,13 Nov. 1990; M. Itoh, “Semiconductor memory element and method offabricating the same,” U.S. Pat. No. 5,220,530, 15 Jun. 1993; W. H.Krautschneider et al., “Process for the Manufacture of a high densityCell Array of Gain Memory Cells,” U.S. Pat. No. 5,308,783, 3 May 1994;C. Hu et al., “Capacitorless DRAM device on Silicon on InsulatorSubstrate,” U.S. Pat. No. 5,448,513, 5 Sep. 1995; S. K. Banerjee,“Method of making a Trench DRAM cell with Dynamic Gain,” U.S. Pat. No.5,066,607, 19 Nov. 1991; S. K. Banerjee, “Trench DRAM cell with DynamicGain,” U.S. Pat. No. 4,999,811, 12 Mar. 1991; Lim et al., “Twotransistor DRAM cell,” U.S. Pat. No. 5,122,986, 16 Jun. 1992).

Recently a one transistor gain cell has been reported as shown in FIG.3. (See generally, T. Ohsawa et al., “Memory design using one transistorgain cell on SOI,” IEEE Int. Solid State Circuits Conference, SanFrancisco, 2002, pp. 152-153). FIG. 3 illustrates a portion of a DRAMmemory circuit containing two neighboring gain cells, 301 and 303. Eachgain cell, 301 and 303, is separated from a substrate 305 by a buriedoxide layer 307. The gain cells, 301 and 303, are formed on the buriedoxide 307 and thus have a floating body, 309-1 and 309-2 respectively,separating a source region 311 (shared for the two cells) and a drainregion 313-1 and 313-2. A bit/data line 315 is coupled to the drainregions 313-1 and 313-2 via bit contacts, 317-1 and 317-2. A groundsource 319 is coupled to the source region 311. Wordlines or gates, 321-1 and 321-2, oppose the floating body regions 309-1 and 309-2 and areseparated therefrom by a gate oxide, 323-1 and 323-2.

In the gain cell shown in FIG. 3 a floating body, 309-1 and 309-2, backgate bias is used to modulate the threshold voltage and consequently theconductivity of the NMOS transistor in each gain cell. The potential ofthe back gate body, 309-1 and 309-2, is made more positive by avalanchebreakdown in the drain regions, 313-1 and 313-2, and collection of theholes generated by the body, 309-1 and 309-2. A more positive potentialor forward bias applied to the body, 309-1 and 309-2, decreases thethreshold voltage and makes the transistor more conductive whenaddressed. Charge storage is accomplished by this additional chargestored on the floating body, 309-1 and 309-2. Reset is accomplished byforward biasing the drain-body n-p junction diode to remove charge fromthe body.

Still, there is a need in the art for a memory cell structure fordynamic random access memory devices, which produces a large amplitudeoutput signal without significantly increasing the size of the memorycell to improve memory densities.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a circuit diagram illustrating conventional dynamic randomaccess memory (DRAM) cells.

FIG. 2 is a block diagram illustrating a DRAM device.

FIG. 3 illustrates a portion of a DRAM memory circuit containing twoneighboring gain cells.

FIG. 4A is a cross-sectional view illustrating an embodiment of a pairof merged MOS-bipolar capacitor gain cells according to the teachings ofthe present invention.

FIG. 4B illustrates an electrical equivalent circuit of one of the pairof merged MOS-bipolar capacitor gain cells shown in FIG. 4A.

FIG. 4C illustrates an embodiment for one mode of operation according tothe teachings of the present invention.

FIG. 4D illustrates an embodiment for a mode of operation of a verticalbi-polar transistor in a merged device according to the teachings of thepresent invention.

FIG. 5 is a block diagram illustrating an embodiment of an electronicsystem utilizing the memory cells of the present invention.

FIGS. 6A-6D illustrate one embodiment of a fabrication technique formemory cells according to the teachings of the present invention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

In the following detailed description of the invention, reference ismade to the accompanying drawings which form a part hereof, and in whichare shown, by way of illustration, specific embodiments in which theinvention may be practiced. The embodiments are intended to describeaspects of the invention in sufficient detail to enable those skilled inthe art to practice the invention. Other embodiments may be utilized andchanges may be made without departing from the scope of the presentinvention. In the following description, the terms wafer and substrateare interchangeably used to refer generally to any structure on whichintegrated circuits are formed, and also to such structures duringvarious stages of integrated circuit fabrication. Both terms includedoped and undoped semiconductors, epitaxial layers of a semiconductor ona supporting semiconductor or insulating material, combinations of suchlayers, as well as other such structures that are known in the art.

The term “horizontal” as used in this application is defined as a planeparallel to the conventional plane or surface of a wafer or substrate,regardless of the orientation of the wafer or substrate. The term“vertical” refers to a direction perpendicular to the horizontal asdefined above. Prepositions, such as “on”, “side” (as in “sidewall”),“higher”, “lower”, “over” and “under” are defined with respect to theconventional plane or surface being on the top surface of the wafer orsubstrate, regardless of the orientation of the wafer or substrate. Thefollowing detailed description is, therefore, not to be taken in alimiting sense, and the scope of the present invention is defined onlyby the appended claims, along with the full scope of equivalents towhich such claims are entitled.

FIG. 4A is a cross-sectional view illustrating an embodiment of a pairof memory cells, or merged MOS-bipolar capacitor gain cells, 401-1 and401-2, according to the teachings of the present invention. Theembodiment of the merged MOS-bipolar capacitor gain cells, 401-1 and401-2, in FIG. 4A differs from that shown in FIG. 3 in that thetransistors are vertical. Further, the memory cells, 401-1 and 401-2, ofthe present invention differ from those described in the abovereferenced copending, commonly assigned application, entitled “SingleTransistor Vertical Memory Gain Cell,” Ser. No. 10/231,397, in that hererather than avalanche breakdown being utilized to store charge on thefloating body of a MOS transistor, charge is injected on to the body bybipolar transistor action.

As shown in embodiment of FIG. 4A, each merged MOS-bipolar capacitorgain cell, 401-1 and 401-2, along a row of an array is formed on an n+conductivity type emitter line 407 formed on a p-type substrate 409. Thevertically merged MOS-bipolar capacitor gain cells 401-1 and 401-2include an n+ emitter region for the merged MOS-bipolar structure, 408-1and 408-2 respectively. In some embodiments, as shown in FIG. 4A, the n+emitter region, 408-1 and 408-2, is integrally formed with the emitterline 407. In the embodiment of FIG. 4A a p-type conductivity material,411-1 and 411-2, is formed vertically on the n+ emitter region, 408-1and 408-2. According to the teachings of the present invention thep-type conductivity material, 411-1 and 411-2, serves a dual role. Thatis, the p-type conductivity material, 411-1 and 411-2, serves as a baseregion for the bipolar device and a source region of the MOS device forthe merged MOS-bipolar structure. In this manner, the base region of thebipolar device and the source region of the MOS device are electricallycoupled to one another. The p-type conductivity material, 411-1 and411-2, includes a connection (not shown) to a “write data word line”along columns in the array. The “write data word line” is operable tobias the base region function of the bipolar device of the mergedMOS-bipolar structure.

In the embodiment of FIG. 4A, an n-type conductivity material, 413-1 and413-2, is formed vertically on the p-type conductivity material, 411-1and 411-2. According to the teachings of the present invention, then-type conductivity material, 413-1 and 413-2, serves a dual role. Thatis, the n-type conductivity material, 413-1 and 413-2, serves as acollector region for the bipolar device and a body region of the MOSdevice for the merged MOS-bipolar structure. In this manner, thecollector region of the bipolar device and the body region of the MOSdevice are electrically coupled to one another.

In the embodiment of FIG. 4A, a p+ type conductivity material, 415-1 and415-2, is formed vertically on the n-type conductivity material, 413-1and 413-2. The n-type conductivity material, 413-1 and 413-2, serves asthe drain regions for the MOS device of the merged MOS-bipolarstructure. A data/bit line 417 couples to the drain regions, 415-1 and415-2, along rows of an array.

A body capacitor, 403-1 and 403-2, and body capacitor plate, 405-1 and405-2, oppose the collector/body region 413-1 and 413-2 on one side ofthe vertical merged MOS-bipolar capacitor memory gain cells, 401-1 and401-2. A gate, 419-1 and 419-2, is formed on another side of thevertical merged MOS-bipolar capacitor memory gain cells, 401-1 and 401-2from the body capacitor, 403-1 and 403-2, and body capacitor plate,405-1 and 405-2.

FIG. 4B illustrates an electrical equivalent circuit for one of the pairof memory cells, or merged MOS-bipolar capacitor gain cells, 401-1 and401-2, shown in FIG. 4A. In FIG. 4B, “read data word line” 421-1 isshown connected to gate 419-1.

Thus, as shown in FIGS. 4A and 4B, the merged device consists of a MOStransistor-bipolar transistor-storage capacitor. The sense device usedto read the cell, e.g. cell 401-1, is the PMOS transistor, e.g. 402-1,which is addressed by the read data word line 421-1.

In operation, if negative charge or electrons are stored on the body413-1, then the body will be slightly forward biased and the PMOStransistor 402-1 will be more conductive than normal. Charge is injectedon to the floating body 413-1 of the PMOS transistor 402-1 by the N+-P-Nvertical bipolar transistor, e.g. 409-1. The NPN transistor 409-1 neednot be a high performance device nor have a high current gain. In thevarious embodiments, the NPN transistor 409-1 can be a basic, high yieldstructure. Forward bias can be achieved by driving theemitter/sourceline 407 negative and by driving the write data word line432, connected to the base/source region 411-1, positive to achieve acoincident address at one location. This is illustrated in more detailin the schematic embodiment shown in FIG. 4D. The cell, 401-1, can beerased by driving the drain 415-1 positive and by driving the gate 419-1negative to forward bias the drain-body p-n junction.

FIG. 4C illustrates an embodiment for another mode of operation for avertical merged MOS-bipolar-capacitor memory gain cell, e.g. 401-1,according to the teachings of the present invention. In the mode ofoperation, shown in FIG. 4C, the embodiment allows provisions forbiasing a body capacitor plate line 431 to a positive potential. In thisembodiment, biasing a body capacitor plate line 431 can be used inconjunction with a positive read data word line 419-1 voltage to drivethe n-type body 413-1 and the p-type source and drain, 411-1 and 415-1respectively, junctions to a larger reverse bias during standby. Thisinsures that the floating body 413-1 will not become forward biasedduring standby. Thus, stored charge will not be lost due to leakagecurrents with forward bias.

FIG. 5 is a block diagram of a processor-based system 500 utilizing avertical merged MOS-bipolar-capacitor memory gain cell according to thevarious embodiments of the present invention. That is, the system 500utilizes various embodiments of the memory cell illustrated in FIGS.4A-4D. The processor-based system 500 may be a computer system, aprocess control system or any other system employing a processor andassociated memory. The system 500 includes a central processing unit(CPU) 502, e.g., a microprocessor, that communicates with the RAM 512and an I/O device 508 over a bus 520. It must be noted that the bus 520may be a series of buses and bridges commonly used in a processor-basedsystem, but for convenience purposes only, the bus 520 has beenillustrated as a single bus. A second I/O device 510 is illustrated, butis not necessary to practice the invention. The processor-based system500 also includes read-only memory (ROM) 514 and may include peripheraldevices such as a floppy disk drive 504 and a compact disk (CD) ROMdrive 506 that also communicates with the CPU 502 over the bus 520 as iswell known in the art.

It will be appreciated by those skilled in the art that additionalcircuitry and control signals can be provided, and that the memorydevice 500 has been simplified to help focus on the invention.

It will be understood that the embodiment shown in FIG. 5 illustrates anembodiment for electronic system circuitry in which the novel memorycells of the present invention are used. The illustration of system 500,as shown in FIG. 5, is intended to provide a general understanding ofone application for the structure and circuitry of the presentinvention, and is not intended to serve as a complete description of allthe elements and features of an electronic system using the novel memorycell structures. Further, the invention is equally applicable to anysize and type of system 500 using the novel memory cells of the presentinvention and is not intended to be limited to that described above. Asone of ordinary skill in the art will understand, such an electronicsystem can be fabricated in single-package processing units, or even ona single semiconductor chip, in order to reduce the communication timebetween the processor and the memory device.

Applications containing the novel memory cell of the present inventionas described in this disclosure include electronic systems for use inmemory modules, device drivers, power modules, communication modems,processor modules, and application-specific modules, and may includemultilayer, multichip modules. Such circuitry can further be asubcomponent of a variety of electronic systems, such as a clock, atelevision, a cell phone, a personal computer, an automobile, anindustrial control system, an aircraft, and others.

Methods of Fabrication

The inventor has previously disclosed a variety of vertical devices andapplications employing transistors along the sides of rows or finsetched into bulk silicon or silicon on insulator wafers for devices inarray type applications in memories. (See generally, U.S. Pat. Nos.6,072,209; 6,150,687; 5,936,274 and 6,143,636; 5,973,356 and 6,238,976;5,991,225 and 6,153,468; 6,124,729; 6,097,065). The present inventionuses similar techniques to fabricate the single transistor verticalmemory gain cell described herein. Each of the above referenced USPatents is incorporated in full herein by reference.

FIG. 6A outlines one embodiment of a fabrication technique for mergedMOS-bipolar-capacitor memory gain cells where the emitter/sourceline 602are separated and can be biased. In the embodiment of FIG. 6A, a p-typesubstrate 601 has been processed to include layers thereon of an n+conductivity type 602, a p conductivity type 603, an n conductivity type604, and a p+ conductivity type 605. In the embodiment of FIG. 6A, thefabrication continues with the wafer being oxidized and then a siliconnitride layer (not shown) is deposited to act as an etch mask for ananisotropic or directional silicon etch which will follow. This nitridemask and underlying oxide are patterned and trenches are etched as shownin both directions, leaving blocks of silicon, e.g. 600-1, 600-2, 600-3,and 600-4, having alternating layers of n and p type conductivitymaterial. Any number of such blocks can be formed on the wafer. In theembodiment of FIG. 6A, two masking steps are used and one set oftrenches, e.g. trench 610, is made deeper than the other, e.g. trench609, in order to provide separation and isolation of the emitter/sourcelines 602.

FIG. 6B illustrates a perspective view taken at cut line 6B-6B from FIG.6A. In FIG. 6B, both trenches 609 and 610 are filled with oxide 607 andthe whole structure is planarized such as by CMP. As shown in FIG. 6B,the oxide 615 in the write data word line blocks, trench 610, arerecessed to near the bottom and just above the bottom of the p-typeregions 603 in the pillars, 600-1, 600-2, 600-3, and 600-4. In theembodiment shown in FIG. 6B, p-type polysilicon 615 is deposited andplanarized to be level with the tops of the pillars and then recessed tojust below the top of the p-type regions 603 in the pillars, 600-1,600-2, 600-3, and 600-4. This p-type poly 615 and the p-type regions 603in the pillars 600-1, 600-2, 600-3, and 600-4 will form the write dataword lines, shown as 432 in FIGS. 4B and 4C.

In FIG. 6C, oxide is again deposited and then planarized to the top ofthe pillars. Next, the trenches 609 for the read data word lines, shownas 421-1 in FIGS. 4B and 4C, and the capacitor plate lines, shown as 431in FIG. 4C, are opened.

FIG. 6D illustrates a cross-sectional view taken along cut line 6D-6D inFIG. 6C. This remaining structure, as shown in the embodiment of FIG.6D, can then be continued by conventional techniques including gateoxidation and deposition and anisotropic etch of polysilicon along thesidewalls to form body capacitor plate, e.g. 405-1 in FIGS. 4A-4C, andread data word lines, e.g. 421-1 in FIGS. 4B and 4C. The data or bitlines, 417 in FIGS. 4A-4C, on top can be realized using conventionalmetallurgy.

As one of ordinary skill in the art will appreciate upon reading thisdisclosure, the vertical merged MOS-bipolar-capacitor memory gain cell401-1 of the present invention can provide a very high gain andamplification of the stored charge on the floating body 413-1 of thePMOS sense transistor 402-1. A small change in the threshold voltagecaused by charge stored on the floating body 413-1 will result in alarge difference in the number of holes conducted between the drain415-1 and source 411-1 of the PMOS sense transistor 402-1 during theread data operation. This amplification allows the small storagecapacitance of the sense amplifier floating body 413-1 to be usedinstead of a large stacked capacitor storage capacitance. The resultingcell 401-1 has a very high density with a cell area of 4F², where F isthe minimum feature size, and whose vertical extent is far less than thetotal height of a stacked capacitor or trench capacitor cell and accesstransistor.

While the description here has been given for a p-type substrate, analternative embodiment would work equally well with n-type orsilicon-on-insulator substrates. In that case, the sense transistorwould be a PMOS transistor with an n-type floating body.

Conclusion

The cell can provide a very high gain and amplification of the storedcharge on the floating body of the PMOS sense transistor. A small changein the threshold voltage caused by charge stored on the floating bodywill result in a large difference in the number of holes conductedbetween the drain and source of the PMOS sense transistor during theread data operation. This amplification allows the small storagecapacitance of the sense amplifier floating body to be used instead of alarge stacked capacitor storage capacitance. The resulting cell has avery high density with a cell area of 4F², where F is the minimumfeature size, and whose vertical extent is far less than the totalheight of a stacked capacitor or trench capacitor cell and accesstransistor.

It is to be understood that the above description is intended to beillustrative, and not restrictive. Many other embodiments will beapparent to those of skill in the art upon reviewing the abovedescription. The scope of the invention should, therefore, be determinedwith reference to the appended claims, along with the full scope ofequivalents to which such claims are entitled.

1. A memory array, comprising: a number of memory cells formed on asubstrate, wherein each memory cell includes: a semiconductor pillar,including: a first conductivity region with n-type doping on asubstrate; a second conductivity region with p-type doping on the firstconductivity region; a third conductivity region with n-type doping onthe second conductivity region; and a fourth conductivity region withp-type doping on the third conductivity region; a gate adjacent to andseparated from the third conductivity region on a first side of thesemiconductor pillar; and a body capacitor, including the thirdconductivity region and a capacitor plate adjacent to and separated fromthe third conductivity region on a second side of the semiconductorpillar.
 2. The memory array of claim 1, wherein the first conductivityregion is adapted to function as an emitter of a bi-polar transistor,the second conductivity region is adapted to function as a base regionfor a bi-polar transistor, and the third conductivity region is adaptedto function as a collector region of a bi-polar transistor and as a bodyregion of a MOS transistor.
 3. The memory array of claim 2, wherein theMOS transistor includes a p-channel MOS transistor (PMOS) and thebi-polar transistor includes an NPN bi-polar transistor.
 4. The memoryarray of claim 1, wherein the memory cell has an area of 4F², where F isa minimum feature size.
 5. The memory array of claim 1, wherein thebi-polar transistor is operable to modulate the threshold voltage andconductivity of the MOS transistor in each memory cell.
 6. The memoryarray of claim 1, wherein the memory array is included in a dynamicrandom access memory (DRAM) chip.
 7. A memory array, comprising: anumber of memory cells formed on a substrate, wherein each memory cellincludes: a semiconductor pillar, including: a first conductivity regionwith n-type doping on a substrate; a second conductivity region withp-type doping on the first conductivity region; a third conductivityregion with n-type doping on the second conductivity region; and afourth conductivity region with p-type doping on the third conductivityregion; a gate adjacent to and separated from the third conductivityregion on a first side of the semiconductor pillar; and a bodycapacitor, including the third conductivity region and a capacitor plateadjacent to and separated from the third conductivity region on a secondside of the semiconductor pillar; and wherein the memory cell has anarea of 4F², where F is a minimum feature size.
 8. The memory array ofclaim 7, wherein the memory array is included in a dynamic random accessmemory (DRAM) chip.
 9. The memory array of claim 7, wherein the firstconductivity region is adapted to function as an emitter of a bi-polartransistor.
 10. The memory array of claim 7, wherein the secondconductivity region is adapted to function as a base region for abi-polar transistor.
 11. The memory array of claim 7, wherein the thirdconductivity region is adapted to function as a collector region of abi-polar transistor.
 12. The memory array of claim 7, wherein the thirdconductivity region is adapted to function as a body region of a MOStransistor.
 13. The memory array of claim 12, wherein the MOS transistorincludes a p-channel MOS transistor (PMOS).
 14. A memory array,comprising: a number of memory cells formed on a substrate, wherein eachmemory cell includes: a semiconductor pillar, including: a firstconductivity region on a substrate; a second conductivity region on thefirst conductivity region; a third conductivity region on the secondconductivity region; and a fourth conductivity region on the thirdconductivity region; a gate adjacent to and separated from the thirdconductivity region on a first side of the semiconductor pillar; and abody capacitor, including the third conductivity region and a capacitorplate adjacent to and separated from the third conductivity region on asecond side of the semiconductor pillar; and wherein the firstconductivity region is adapted to function as an emitter of a bi-polartransistor, the second conductivity region is adapted to function as abase region for a bi-polar transistor, and the third conductivity regionis adapted to function as a collector region of a bi-polar transistorand as a body region of a MOS transistor.
 15. The memory array of claim14, wherein the first conductivity region includes n-type doping. 16.The memory array of claim 14, wherein the second conductivity regionincludes p-type doping.
 17. The memory array of claim 14, wherein thethird conductivity region includes n-type doping.
 18. The memory arrayof claim 14, wherein the fourth conductivity region includes p-typedoping.
 19. The memory array of claim 14, wherein the memory array isincluded in a dynamic random access memory (DRAM) chip.
 20. The memoryarray of claim 14, wherein each memory cell has an area of 4F², where Fis a minimum feature size.